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  sb120 thru sb160 vishay semiconductors formerly general semiconductor document number 88715 www.vishay.com 11-feb-02 1 schottky barrier rectifier reverse voltage 20 to 60v forward current 1.0a maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol sb120 sb130 sb140 sb150 sb160 unit maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v maximum average forward rectified current i f(av) 1.0 a at 0.375 (9.5mm) lead length (see fig. 1) peak forward surge current 8.3ms single half sine-wave i fsm 40 a superimposed on rated load (jedec method) typical thermal resistance (1) r ja 50 r jl 15 ?/w operating junction temperature range t j 65 to +125 65 to +150 ? storage temperature range t stg 65 to +150 ? electrical characteristics (t a = 25? unless otherwise noted) maximum instantaneous v f 0.50 0.70 v forward voltage at 1.0a (2) maximum instantaneous reverse current t a = 25? i r 0.5 ma at rated dc blocking voltage (2) t a = 100? 10 5.0 notes: (1) thermal resistance junction to lead p.c.b. mounted 0.375 (9.5mm) lead length (2) pulse test: 300 s pulse width, 1% duty cycle features ?plastic package has underwriters laboratory flammability classification 94v-0 ?low power loss, high efficiency ?for use in low voltage high frequency inverters, free wheeling, and polarity protection applications ?guardring for overvoltage protection mechanical data case: jedec do-204al molded plastic body terminals: plated axial leads, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds 0.375 (9.5mm) lead length, 5lbs. (2.3kg) tension polarity: color band denotes cathode end mounting position: any weight: 0.012 ounce, 0.34 gram 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) dia. dimensions in inches and (millimeters) do-204al (do-41) dimensions in inches and (millimeters)
sb120 thru sb160 vishay semiconductors formerly general semiconductor www.vishay.com document number 88715 2 11-feb-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) instantaneous forward current (a) 50 10 instantaneous reverse current (ma) 1.0 0.1 0.01 fig. 1 - forward current derating curve 0 0.25 0.5 0.75 0 50 75 25 100 125 150 175 1.0 average forward current (a) peak forward surge current (a) number of cycles at 60 h z fig. 2 - maximum non-repetitive peak forward surge current 0 10 30 20 50 40 110 100 t j = t j max. 8.3ms single half sine-wave (jedec method) lead temperature ( c) fig. 3 - typical instantaneous forward characteristics 1.0 10 100 0.01 0.001 0.1 t j = 125 c resistive or inductive load 0.375" (9.5mm) lead length transient thermal impedance ( c/w) 0.01 110 100 10 100 0.1 0.1 1 pulse duration (sec.) t j = 125 c fig. 5 - typical junction capacitance junction capacitance (pf) 110 100 100 400 10 0.1 reverse voltage (v) t j = 25 c f = 1.0 mh z v sig = 50mvp-p instantaneous forward voltage (v) 0 0.4 0.2 1.2 0.8 0.6 1.4 1.6 1.0 pulse width = 300 s 1% duty cycle 0 20 100 40 60 80 fig. 6 - typical transient thermal impedance percent of rated peak reverse voltage (%) sb120 sb140 sb150 & sb160 t j = 25 c t j = 150 c sb120 sb140 sb150 & sb160 sb120 sb140 sb150 & sb160 t j = 75 c t j = 25 c sb120 sb140 sb150 & sb160 fig. 4 - typical reverse characteristics


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